Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering
文献类型:期刊论文
作者 | Ding, XZ ; Zhang, FM ; Yan, JS ; Shen, HL ; Wang, X ; Liu, XH ; Shen, DF |
刊名 | JOURNAL OF APPLIED PHYSICS
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出版日期 | 1997 |
卷号 | 82期号:10页码:5154-5158 |
关键词 | FE16N2 FILMS MOMENT ALPHA''-FE16N2 DENSITY |
ISSN号 | 0021-8979 |
通讯作者 | Ding, XZ, CHINESE ACAD SCI,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/98847] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | Ding, XZ,Zhang, FM,Yan, JS,et al. Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering[J]. JOURNAL OF APPLIED PHYSICS,1997,82(10):5154-5158. |
APA | Ding, XZ.,Zhang, FM.,Yan, JS.,Shen, HL.,Wang, X.,...&Shen, DF.(1997).Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering.JOURNAL OF APPLIED PHYSICS,82(10),5154-5158. |
MLA | Ding, XZ,et al."Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering".JOURNAL OF APPLIED PHYSICS 82.10(1997):5154-5158. |
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