Gettering of Cu to voids induced by H+ implantation in SIMOX substrate
文献类型：期刊论文
| 作者 | Zhang,M ; Lin,CL ; Hemment,PLF ; Gutjahr,K ; Gosele,U |
| 刊名 | PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES
 |
| 出版日期 | 1997 |
| 卷号 | 97期号:23页码:86-91 |
| 通讯作者 | Zhang, M, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Electrochemistry |
| 收录类别 | SCI |
| 原文出处 | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=162&SID=T1bBjPaMHA4PI3h27lN&page=1&doc=1 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98892]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Zhang,M,Lin,CL,Hemment,PLF,et al. Gettering of Cu to voids induced by H+ implantation in SIMOX substrate[J]. PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,1997,97(23):86-91. |
| APA | Zhang,M,Lin,CL,Hemment,PLF,Gutjahr,K,&Gosele,U.(1997).Gettering of Cu to voids induced by H+ implantation in SIMOX substrate.PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,97(23),86-91. |
| MLA | Zhang,M,et al."Gettering of Cu to voids induced by H+ implantation in SIMOX substrate".PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 97.23(1997):86-91. |
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