中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs

文献类型:期刊论文

作者Shu, WM ; Gu, WD ; Wu, J ; Xia, GQ ; Houston, PA
刊名1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
出版日期1998
页码605-607
通讯作者Shu, WM, Chinese Acad Sci, Shanghai Inst Met, 865 Changing Rd, Beijing 100864, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98906]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Shu, WM,Gu, WD,Wu, J,et al. Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs[J]. 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,1998:605-607.
APA Shu, WM,Gu, WD,Wu, J,Xia, GQ,&Houston, PA.(1998).Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs.1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,605-607.
MLA Shu, WM,et al."Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs".1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS (1998):605-607.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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