Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs
文献类型：期刊论文
| 作者 | Shu, WM ; Gu, WD ; Wu, J ; Xia, GQ ; Houston, PA |
| 刊名 | 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
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| 出版日期 | 1998 |
| 页码 | 605-607 |
| 通讯作者 | Shu, WM, Chinese Acad Sci, Shanghai Inst Met, 865 Changing Rd, Beijing 100864, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98906]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Shu, WM,Gu, WD,Wu, J,et al. Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs[J]. 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,1998:605-607. |
| APA | Shu, WM,Gu, WD,Wu, J,Xia, GQ,&Houston, PA.(1998).Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs.1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,605-607. |
| MLA | Shu, WM,et al."Evidence of failure at high temperatures by metal penetration in Al0.3Ga0.22In0.48P/GaAS HBTs".1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS (1998):605-607. |
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