Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field
文献类型：期刊论文
| 作者 | LEI, XL（雷啸霖）（雷啸霖） |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1998 |
| 卷号 | 84期号:3页码:1396-1404 |
| 关键词 | FREQUENCY CONDUCTIVITY TEMPERATURE RESISTIVITY RELAXATION IMPURITY GASES |
| ISSN号 | 0021-8979 |
| 通讯作者 | Lei, XL, China Ctr Adv Sci & Technol, World Lab, POB 8730, Beijing 100080, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98910]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | LEI, XL. Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field[J]. JOURNAL OF APPLIED PHYSICS,1998,84(3):1396-1404. |
| APA | LEI, XL.(1998).Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field.JOURNAL OF APPLIED PHYSICS,84(3),1396-1404. |
| MLA | LEI, XL."Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field".JOURNAL OF APPLIED PHYSICS 84.3(1998):1396-1404. |
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