The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness
文献类型：期刊论文
| 作者 | Gao, JX ; Yu, XF ; Zhang, M ; Lin, CL ; Yan, RL ; Ren, DY |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 1998 |
| 卷号 | 10期号:20页码:4393-4399 |
| ISSN号 | 0953-8984 |
| 关键词 | BURIED OXIDES SOI SILICON WAFERS |
| 通讯作者 | Gao, JX, Acad Sinica, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98924]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Gao, JX,Yu, XF,Zhang, M,et al. The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1998,10(20):4393-4399. |
| APA | Gao, JX,Yu, XF,Zhang, M,Lin, CL,Yan, RL,&Ren, DY.(1998).The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness.JOURNAL OF PHYSICS-CONDENSED MATTER,10(20),4393-4399. |
| MLA | Gao, JX,et al."The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness".JOURNAL OF PHYSICS-CONDENSED MATTER 10.20(1998):4393-4399. |
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