A modification of formulas used in SOI capacitors analysis and its application in total dose radiation
文献类型：期刊论文
| 作者 | Gao, JX ; Yu, XF ; Zhang, M ; Lin, CL ; Yan, RL |
| 刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS
 |
| 出版日期 | 1998 |
| 卷号 | 145期号:4页码:307-317 |
| 关键词 | SIMOX BURIED OXIDES SILICON-ON-INSULATOR OXYGEN IMPLANT DEVICES |
| ISSN号 | 1042-0150 |
| 通讯作者 | Gao, JX, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Chang Ning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Nuclear Science & Technology; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98927]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Gao, JX,Yu, XF,Zhang, M,et al. A modification of formulas used in SOI capacitors analysis and its application in total dose radiation[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,1998,145(4):307-317. |
| APA | Gao, JX,Yu, XF,Zhang, M,Lin, CL,&Yan, RL.(1998).A modification of formulas used in SOI capacitors analysis and its application in total dose radiation.RADIATION EFFECTS AND DEFECTS IN SOLIDS,145(4),307-317. |
| MLA | Gao, JX,et al."A modification of formulas used in SOI capacitors analysis and its application in total dose radiation".RADIATION EFFECTS AND DEFECTS IN SOLIDS 145.4(1998):307-317. |
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