Nanovoid layer induced by He+ and H+ implantation and its gettering effect in SOI wafers
文献类型：期刊论文
| 作者 | Lin, CL ; Zhang, M ; Duo, XZ ; Scholz, R ; Gosele, U |
| 刊名 | 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
 |
| 出版日期 | 1998 |
| 页码 | 757-760 |
| 关键词 | SILICON-OXIDES BREAKDOWN |
| 通讯作者 | Lin, CL, Chinese Acad Sci, Shanghai Inst Met, State Key Lab funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98928]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Lin, CL,Zhang, M,Duo, XZ,et al. Nanovoid layer induced by He+ and H+ implantation and its gettering effect in SOI wafers[J]. 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,1998:757-760. |
| APA | Lin, CL,Zhang, M,Duo, XZ,Scholz, R,&Gosele, U.(1998).Nanovoid layer induced by He+ and H+ implantation and its gettering effect in SOI wafers.1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,757-760. |
| MLA | Lin, CL,et al."Nanovoid layer induced by He+ and H+ implantation and its gettering effect in SOI wafers".1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS (1998):757-760. |
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