Electronic states of In3Sb2, In2Sb3, and their positive ions
文献类型：期刊论文
| 作者 | Feng, PY ; Balasubramanian, K |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY A
 |
| 出版日期 | 1998 |
| 卷号 | 102期号:45页码:9047-9055 |
| 关键词 | GALLIUM-ARSENIDE CLUSTERS KINETIC-ENERGY SPECTROSCOPY SMALL GAAS CLUSTERS INDIUM-PHOSPHIDE CURVES PHOTODETACHMENT POTENTIALS CONSTANTS SURFACES TRIMERS |
| ISSN号 | 1089-5639 |
| 通讯作者 | Balasubramanian, K, Arizona State Univ, Dept Biochem & Chem, Tempe, AZ 85287 USA |
| 学科主题 | Chemistry, Physical; Physics, Atomic, Molecular & Chemical |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98945]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Feng, PY,Balasubramanian, K. Electronic states of In3Sb2, In2Sb3, and their positive ions[J]. JOURNAL OF PHYSICAL CHEMISTRY A,1998,102(45):9047-9055. |
| APA | Feng, PY,&Balasubramanian, K.(1998).Electronic states of In3Sb2, In2Sb3, and their positive ions.JOURNAL OF PHYSICAL CHEMISTRY A,102(45),9047-9055. |
| MLA | Feng, PY,et al."Electronic states of In3Sb2, In2Sb3, and their positive ions".JOURNAL OF PHYSICAL CHEMISTRY A 102.45(1998):9047-9055. |
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