Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam
文献类型：期刊论文
| 作者 | Zhang, M ; Lin, CL ; Weng, HM ; Scholz, R ; Gosele, U |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 1998 |
| 卷号 | 333期号:1-2页码:245-250 |
| 关键词 | ANNIHILATION SPECTROSCOPY INDUCED CAVITIES SILICON VOIDS METALS |
| ISSN号 | 0040-6090 |
| 通讯作者 | Zhang, M, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98959]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Zhang, M,Lin, CL,Weng, HM,et al. Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam[J]. THIN SOLID FILMS,1998,333(1-2):245-250. |
| APA | Zhang, M,Lin, CL,Weng, HM,Scholz, R,&Gosele, U.(1998).Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam.THIN SOLID FILMS,333(1-2),245-250. |
| MLA | Zhang, M,et al."Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam".THIN SOLID FILMS 333.1-2(1998):245-250. |
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