Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yang, QK ; Li, AZ ; Zhang, YG(张永刚） ; Yang, B ; Brandt, O ; Ploog, K |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1998 |
| 卷号 | 192期号:1-2页码:28-32 |
| 关键词 | DISLOCATION DENSITIES |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, AZ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/98967]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Yang, QK,Li, AZ,Zhang, YG,et al. Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,192(1-2):28-32. |
| APA | Yang, QK,Li, AZ,Zhang, YG,Yang, B,Brandt, O,&Ploog, K.(1998).Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,192(1-2),28-32. |
| MLA | Yang, QK,et al."Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 192.1-2(1998):28-32. |
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