中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions

文献类型:期刊论文

作者Zhao, J ; Mao, DS ; Lin, ZX ; Jiang, BY ; Yu, YH ; Liu, XH ; Wang, HZ ; Yang, GQ
刊名APPLIED PHYSICS LETTERS
出版日期1998
卷号73期号:13页码:1838-1840
关键词POROUS SILICON-CARBIDE VISIBLE PHOTOLUMINESCENCE LUMINESCENCE NANOCRYSTALS GE SIO2-FILMS PARTICLES
ISSN号0003-6951
通讯作者Zhao, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98979]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Zhao, J,Mao, DS,Lin, ZX,et al. Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions[J]. APPLIED PHYSICS LETTERS,1998,73(13):1838-1840.
APA Zhao, J.,Mao, DS.,Lin, ZX.,Jiang, BY.,Yu, YH.,...&Yang, GQ.(1998).Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions.APPLIED PHYSICS LETTERS,73(13),1838-1840.
MLA Zhao, J,et al."Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions".APPLIED PHYSICS LETTERS 73.13(1998):1838-1840.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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