中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-lying electronic states of In2As2, In2As2+ and In2As2-

文献类型:期刊论文

作者Feng, PY ; Liao, MZ ; Balasubramanian, K
刊名CHEMICAL PHYSICS LETTERS
出版日期1998
卷号296期号:3-4页码:283-291
关键词KINETIC-ENERGY SPECTROSCOPY RELATIVISTIC EFFECTIVE POTENTIALS GALLIUM-ARSENIDE CLUSTERS INDIUM-PHOSPHIDE CLUSTERS SPIN-ORBIT OPERATORS SMALL GAAS CLUSTERS PHOTOELECTRON-SPECTROSCOPY SEMICONDUCTORS CONSTANTS CURVES
ISSN号0009-2614
通讯作者Balasubramanian, K, Arizona State Univ, Dept Biochem & Chem, Tempe, AZ 85287 USA
学科主题Chemistry, Physical; Physics, Atomic, Molecular & Chemical
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/98986]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Feng, PY,Liao, MZ,Balasubramanian, K. Low-lying electronic states of In2As2, In2As2+ and In2As2-[J]. CHEMICAL PHYSICS LETTERS,1998,296(3-4):283-291.
APA Feng, PY,Liao, MZ,&Balasubramanian, K.(1998).Low-lying electronic states of In2As2, In2As2+ and In2As2-.CHEMICAL PHYSICS LETTERS,296(3-4),283-291.
MLA Feng, PY,et al."Low-lying electronic states of In2As2, In2As2+ and In2As2-".CHEMICAL PHYSICS LETTERS 296.3-4(1998):283-291.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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