Influence of the addition of Co and Ni on the formation of epitaxial semiconducting beta-FeSi2: Comparison of different evaporation methods
文献类型：期刊论文
| 作者 | Mangelinck, D ; Wang, L ; Lin, C ; Gas, P ; Grahn, J ; Ostling, M |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1998 |
| 卷号 | 83期号:8页码:4193-4201 |
| 关键词 | ION-BEAM SYNTHESIS SOLID-PHASE EPITAXY THIN-FILM FORMATION OPTICAL-PROPERTIES IRON SILICIDES ELECTRONIC-STRUCTURE SILICON COBALT GROWTH IMPLANTATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | Mangelinck, D, Kungl Tekn Hogskolan, Dept Elect, POB Electrum 229, S-16440 Kista, Sweden |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99036]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Mangelinck, D,Wang, L,Lin, C,et al. Influence of the addition of Co and Ni on the formation of epitaxial semiconducting beta-FeSi2: Comparison of different evaporation methods[J]. JOURNAL OF APPLIED PHYSICS,1998,83(8):4193-4201. |
| APA | Mangelinck, D,Wang, L,Lin, C,Gas, P,Grahn, J,&Ostling, M.(1998).Influence of the addition of Co and Ni on the formation of epitaxial semiconducting beta-FeSi2: Comparison of different evaporation methods.JOURNAL OF APPLIED PHYSICS,83(8),4193-4201. |
| MLA | Mangelinck, D,et al."Influence of the addition of Co and Ni on the formation of epitaxial semiconducting beta-FeSi2: Comparison of different evaporation methods".JOURNAL OF APPLIED PHYSICS 83.8(1998):4193-4201. |
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