中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films

文献类型:期刊论文

作者Zhao, J ; Mao, DS ; Lin, ZX ; Yu, YH ; Liu, XH ; Yang, GQ
刊名MATERIALS LETTERS
出版日期1999
卷号40期号:2页码:78-82
关键词SEQUENTIAL ION-IMPLANTATION CHEMICAL-VAPOR-DEPOSITION SILICA GLASS VISIBLE PHOTOLUMINESCENCE THERMAL SIO2-FILMS OXIDE-FILMS LUMINESCENCE NANOCRYSTALS LAYERS GE
ISSN号0167-577X
通讯作者Zhao, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99043]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Zhao, J,Mao, DS,Lin, ZX,et al. Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films[J]. MATERIALS LETTERS,1999,40(2):78-82.
APA Zhao, J,Mao, DS,Lin, ZX,Yu, YH,Liu, XH,&Yang, GQ.(1999).Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films.MATERIALS LETTERS,40(2),78-82.
MLA Zhao, J,et al."Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films".MATERIALS LETTERS 40.2(1999):78-82.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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