Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Xin, HP ; Kavanagh, KL ; Zhu, ZQ ; Tu, CW |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1999 |
| 卷号 | 17期号:4页码:1649-1653 |
| 关键词 | LASER-DIODE OPERATION |
| ISSN号 | 1071-1023 |
| 通讯作者 | Xin, HP, Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99045]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Xin, HP,Kavanagh, KL,Zhu, ZQ,et al. Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1999,17(4):1649-1653. |
| APA | Xin, HP,Kavanagh, KL,Zhu, ZQ,&Tu, CW.(1999).Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,17(4),1649-1653. |
| MLA | Xin, HP,et al."Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17.4(1999):1649-1653. |
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