Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor
文献类型：期刊论文
| 作者 | Zhang, XH ; Hu, YS ; Wu, J ; Cheng, ZQ ; Xia, GQ ; Xu, YS ; Chen, ZH ; Gui, YS ; Chu, JH |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 1999 |
| 卷号 | 48期号:3页码:556-560 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION LIGHT-EMITTING-DIODES SPACE-CHARGE-REGION MOLECULAR-BEAM EPITAXY PHASE-EPITAXY INGAALP ALLOYS LASER-DIODES RECOMBINATION EFFICIENCY PHOTOLUMINESCENCE |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhang, XH, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 原文出处 | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=15&SID=4CFbDOkgC@mNJLpK96A&page=1&doc=1 |
| 语种 | 中文 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99053]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Zhang, XH,Hu, YS,Wu, J,et al. Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor[J]. ACTA PHYSICA SINICA,1999,48(3):556-560. |
| APA | Zhang, XH.,Hu, YS.,Wu, J.,Cheng, ZQ.,Xia, GQ.,...&Chu, JH.(1999).Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor.ACTA PHYSICA SINICA,48(3),556-560. |
| MLA | Zhang, XH,et al."Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor".ACTA PHYSICA SINICA 48.3(1999):556-560. |
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