Improvement of the total-dose irradiation hardness in simox material implanted by F+ ions
文献类型：期刊论文
| 作者 | Gao, JX ; Lin, CL ; Zhu, DZ |
| 刊名 | PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES
 |
| 出版日期 | 1999 |
| 卷号 | 99期号:3页码:231-236 |
| 关键词 | ELECTRON-SPIN-RESONANCE BURIED OXIDES TRAPPING CENTERS SOI |
| 通讯作者 | Gao, JX, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99090]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Gao, JX,Lin, CL,Zhu, DZ. Improvement of the total-dose irradiation hardness in simox material implanted by F+ ions[J]. PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,1999,99(3):231-236. |
| APA | Gao, JX,Lin, CL,&Zhu, DZ.(1999).Improvement of the total-dose irradiation hardness in simox material implanted by F+ ions.PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,99(3),231-236. |
| MLA | Gao, JX,et al."Improvement of the total-dose irradiation hardness in simox material implanted by F+ ions".PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 99.3(1999):231-236. |
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