Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method
文献类型:期刊论文
作者 | Gao, JX ; Zheng, LR ; Huang, BP ; Song, ZT ; Yang, LX ; Fan, YJ ; Zhu, DZ ; Lin, CL |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
出版日期 | 1999 |
卷号 | 14期号:9页码:836-839 |
ISSN号 | 0268-1242 |
关键词 | IONIZING-RADIATION PZT CAPACITORS FATIGUE FILMS |
通讯作者 | Gao, JX, Chinese Acad Sci, Shanghai Inst Nucl Res, Shanghai 201800, Peoples R China |
学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
源URL | [http://ir.sim.ac.cn/handle/331004/99094] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | Gao, JX,Zheng, LR,Huang, BP,et al. Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1999,14(9):836-839. |
APA | Gao, JX.,Zheng, LR.,Huang, BP.,Song, ZT.,Yang, LX.,...&Lin, CL.(1999).Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,14(9),836-839. |
MLA | Gao, JX,et al."Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14.9(1999):836-839. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。