中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

文献类型:期刊论文

作者Gao, JX ; Zheng, LR ; Huang, BP ; Song, ZT ; Yang, LX ; Fan, YJ ; Zhu, DZ ; Lin, CL
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期1999
卷号14期号:9页码:836-839
ISSN号0268-1242
关键词IONIZING-RADIATION PZT CAPACITORS FATIGUE FILMS
通讯作者Gao, JX, Chinese Acad Sci, Shanghai Inst Nucl Res, Shanghai 201800, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99094]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Gao, JX,Zheng, LR,Huang, BP,et al. Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1999,14(9):836-839.
APA Gao, JX.,Zheng, LR.,Huang, BP.,Song, ZT.,Yang, LX.,...&Lin, CL.(1999).Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,14(9),836-839.
MLA Gao, JX,et al."Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14.9(1999):836-839.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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