中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of annealing on SiC thin films prepared by pulsed laser deposition

文献类型:期刊论文

作者Huang, JP ; Wang, LW ; Wen, J ; Wang, YX ; Lin, CL ; Ostling, M
刊名DIAMOND AND RELATED MATERIALS
出版日期1999
卷号8期号:12页码:2099-2102
关键词CHEMICAL-VAPOR-DEPOSITION CUBIC SILICON-CARBIDE EPITAXIAL-GROWTH TEMPERATURE ABLATION DEVICES
ISSN号0925-9635
通讯作者Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99111]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Huang, JP,Wang, LW,Wen, J,et al. Effect of annealing on SiC thin films prepared by pulsed laser deposition[J]. DIAMOND AND RELATED MATERIALS,1999,8(12):2099-2102.
APA Huang, JP,Wang, LW,Wen, J,Wang, YX,Lin, CL,&Ostling, M.(1999).Effect of annealing on SiC thin films prepared by pulsed laser deposition.DIAMOND AND RELATED MATERIALS,8(12),2099-2102.
MLA Huang, JP,et al."Effect of annealing on SiC thin films prepared by pulsed laser deposition".DIAMOND AND RELATED MATERIALS 8.12(1999):2099-2102.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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