Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process
文献类型：期刊论文
| 作者 | Huang, JP ; Wang, LW ; Wen, U ; Wang, YX ; Lin, CL ; Zetterling, CM ; Ostling, M |
| 刊名 | WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999
 |
| 出版日期 | 1999 |
| 卷号 | 572页码:207-212 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION CARBIDE TEMPERATURE DEVICES |
| ISSN号 | 0272-9172 |
| 通讯作者 | Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99115]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Huang, JP,Wang, LW,Wen, U,et al. Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process[J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,1999,572:207-212. |
| APA | Huang, JP.,Wang, LW.,Wen, U.,Wang, YX.,Lin, CL.,...&Ostling, M.(1999).Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process.WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,572,207-212. |
| MLA | Huang, JP,et al."Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process".WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 572(1999):207-212. |
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