Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films
文献类型：期刊论文
| 作者 | Zeng, JM ; Lin, CL ; Zheng, LR ; Pignolet, A ; Alexe, M ; Richter, E ; Hesse, D |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 1999 |
| 卷号 | 147期号:1-4页码:207-211 |
| 关键词 | ION-IMPLANTATION PB(ZR TI)O-3 |
| ISSN号 | 0168-583X |
| 通讯作者 | Zeng, JM, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changing Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99135]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Zeng, JM,Lin, CL,Zheng, LR,et al. Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1999,147(1-4):207-211. |
| APA | Zeng, JM.,Lin, CL.,Zheng, LR.,Pignolet, A.,Alexe, M.,...&Hesse, D.(1999).Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,147(1-4),207-211. |
| MLA | Zeng, JM,et al."Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 147.1-4(1999):207-211. |
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