Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps
文献类型：期刊论文
| 作者 | Zhao, FC ; Xia, GQ ; Du, LX ; Tan, HZ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1999 |
| 卷号 | 85期号:1页码:604-607 |
| 关键词 | SEMI-INSULATING GAAS MECHANISM INJECTION MESFETS FETS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Zhao, FC, Chinese Acad Sci, Shanghai Inst Met, 865 Chang Ning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99137]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Zhao, FC,Xia, GQ,Du, LX,et al. Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps[J]. JOURNAL OF APPLIED PHYSICS,1999,85(1):604-607. |
| APA | Zhao, FC,Xia, GQ,Du, LX,&Tan, HZ.(1999).Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps.JOURNAL OF APPLIED PHYSICS,85(1),604-607. |
| MLA | Zhao, FC,et al."Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps".JOURNAL OF APPLIED PHYSICS 85.1(1999):604-607. |
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