中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

文献类型:期刊论文

作者Zeng, JM ; Zheng, LR ; Lin, CL ; Alexe, M ; Pignolet, A ; Hesse, D
刊名PHYSICS LETTERS A
出版日期1999
卷号251期号:5页码:336-339
关键词CAPACITORS PB(ZR TI)O-3 DEGRADATION INTEGRATION DAMAGE
ISSN号0375-9601
通讯作者Zeng, JM, Chinese Acad Sci, Shanghai Inst Met, Natl Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99140]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Zeng, JM,Zheng, LR,Lin, CL,et al. The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation[J]. PHYSICS LETTERS A,1999,251(5):336-339.
APA Zeng, JM,Zheng, LR,Lin, CL,Alexe, M,Pignolet, A,&Hesse, D.(1999).The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation.PHYSICS LETTERS A,251(5),336-339.
MLA Zeng, JM,et al."The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation".PHYSICS LETTERS A 251.5(1999):336-339.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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