中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

文献类型:期刊论文

作者Wang, XF ; Lima, ICD ; Troper, A ; LEI, XL(雷啸霖)(雷啸霖)
刊名JOURNAL OF APPLIED PHYSICS
出版日期1999
卷号85期号:9页码:6598-6605
关键词OPTICAL-PHONON INTERACTION DIELECTRIC CONTINUUM RATES HETEROSTRUCTURES SUPERLATTICES ENHANCEMENT TRANSITION TRANSPORT SYSTEMS WIRE
ISSN号0021-8979
通讯作者Wang, XF, Ctr Brasileiro Pesquisas Fis, Rua Xavier Sigaud 150, BR-22290180 Rio De Janeiro, Brazil
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99149]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Wang, XF,Lima, ICD,Troper, A,et al. Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field[J]. JOURNAL OF APPLIED PHYSICS,1999,85(9):6598-6605.
APA Wang, XF,Lima, ICD,Troper, A,&LEI, XL.(1999).Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field.JOURNAL OF APPLIED PHYSICS,85(9),6598-6605.
MLA Wang, XF,et al."Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field".JOURNAL OF APPLIED PHYSICS 85.9(1999):6598-6605.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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