Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems
文献类型：期刊论文
| 作者 | Chen, YQ ; LEI, XL（雷啸霖）（雷啸霖） |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 1999 |
| 卷号 | 16期号:2页码:134-136 |
| 关键词 | NONLINEAR TRANSPORT DRIVEN GASES RELAXATION |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, YQ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99153]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Chen, YQ,LEI, XL. Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems[J]. CHINESE PHYSICS LETTERS,1999,16(2):134-136. |
| APA | Chen, YQ,&LEI, XL.(1999).Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems.CHINESE PHYSICS LETTERS,16(2),134-136. |
| MLA | Chen, YQ,et al."Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems".CHINESE PHYSICS LETTERS 16.2(1999):134-136. |
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