Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate
文献类型：期刊论文
| 作者 | Huang, JP ; Wang, LW ; Shen, QW ; Lin, CL ; Ostling, M |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 1999 |
| 卷号 | 28期号:3页码:225-227 |
| 关键词 | PULSED-LASER DEPOSITION |
| ISSN号 | 0361-5235 |
| 通讯作者 | Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-25 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/99157]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前) |
| 推荐引用方式 GB/T 7714 | Huang, JP,Wang, LW,Shen, QW,et al. Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate[J]. JOURNAL OF ELECTRONIC MATERIALS,1999,28(3):225-227. |
| APA | Huang, JP,Wang, LW,Shen, QW,Lin, CL,&Ostling, M.(1999).Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate.JOURNAL OF ELECTRONIC MATERIALS,28(3),225-227. |
| MLA | Huang, JP,et al."Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate".JOURNAL OF ELECTRONIC MATERIALS 28.3(1999):225-227. |
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