中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation of AlN thin films by nitridation of Al-coated Si substrate

文献类型:期刊论文

作者Huang, JP ; Wang, LW ; Shen, QW ; Lin, CL ; Ostling, M
刊名THIN SOLID FILMS
出版日期1999
卷号340期号:1-2页码:137-139
关键词CHEMICAL-VAPOR-DEPOSITION PULSED-LASER DEPOSITION GROWTH
ISSN号0040-6090
通讯作者Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-25
源URL[http://ir.sim.ac.cn/handle/331004/99159]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Huang, JP,Wang, LW,Shen, QW,et al. Preparation of AlN thin films by nitridation of Al-coated Si substrate[J]. THIN SOLID FILMS,1999,340(1-2):137-139.
APA Huang, JP,Wang, LW,Shen, QW,Lin, CL,&Ostling, M.(1999).Preparation of AlN thin films by nitridation of Al-coated Si substrate.THIN SOLID FILMS,340(1-2),137-139.
MLA Huang, JP,et al."Preparation of AlN thin films by nitridation of Al-coated Si substrate".THIN SOLID FILMS 340.1-2(1999):137-139.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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