A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET
文献类型：期刊论文
| 作者 | Dai, MZ ; Kim, SI ; Yap, A ; Liu, SH ; Cheng, A ; Yi, L |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2008 |
| 卷号 | 48期号:4页码:504-507 |
| 关键词 | MOSFET DEGRADATION MODEL |
| ISSN号 | 0026-2714 |
| 通讯作者 | Dai, MZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94910]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, MZ,Kim, SI,Yap, A,et al. A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET[J]. MICROELECTRONICS RELIABILITY,2008,48(4):504-507. |
| APA | Dai, MZ,Kim, SI,Yap, A,Liu, SH,Cheng, A,&Yi, L.(2008).A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET.MICROELECTRONICS RELIABILITY,48(4),504-507. |
| MLA | Dai, MZ,et al."A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET".MICROELECTRONICS RELIABILITY 48.4(2008):504-507. |
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