中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

文献类型:期刊论文

作者Zhang, T ; Cheng, Y ; Song, ZT ; Liu, B ; Feng, SL ; Han, XD ; Zhang, Z ; Chen, B
刊名SCRIPTA MATERIALIA
出版日期2008
卷号58期号:11页码:977-980
关键词TRANSMISSION ELECTRON-MICROSCOPY RANDOM-ACCESS MEMORY PHASE-CHANGE GE2SB2TE5 FILMS DATA-STORAGE THIN-FILMS GROWTH TRANSITION SI2SB2TE5
ISSN号1359-6462
通讯作者Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94915]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, T,Cheng, Y,Song, ZT,et al. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process[J]. SCRIPTA MATERIALIA,2008,58(11):977-980.
APA Zhang, T.,Cheng, Y.,Song, ZT.,Liu, B.,Feng, SL.,...&Chen, B.(2008).Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process.SCRIPTA MATERIALIA,58(11),977-980.
MLA Zhang, T,et al."Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process".SCRIPTA MATERIALIA 58.11(2008):977-980.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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