Switching characteristics of phase change memory cell integrated with metal-oxide semiconductor field effect transistor
文献类型：期刊论文
| 作者 | Xu, C ; Liu, B ; Chen, YF ; Liang, S ; Song, ZT ; Feng, SL ; Wan, XD ; Yang, ZY ; Xie, J ; Chen, B |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:5页码:1848-1849 |
| 关键词 | GE2SB2TE5 FILM |
| ISSN号 | 0256-307X |
| 通讯作者 | Xu, C, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94920]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, C,Liu, B,Chen, YF,et al. Switching characteristics of phase change memory cell integrated with metal-oxide semiconductor field effect transistor[J]. CHINESE PHYSICS LETTERS,2008,25(5):1848-1849. |
| APA | Xu, C.,Liu, B.,Chen, YF.,Liang, S.,Song, ZT.,...&Chen, B.(2008).Switching characteristics of phase change memory cell integrated with metal-oxide semiconductor field effect transistor.CHINESE PHYSICS LETTERS,25(5),1848-1849. |
| MLA | Xu, C,et al."Switching characteristics of phase change memory cell integrated with metal-oxide semiconductor field effect transistor".CHINESE PHYSICS LETTERS 25.5(2008):1848-1849. |
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