Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors
文献类型：期刊论文
| 作者 | Wang, L ; Wang, J ; Li, R ; Lee, P ; Hu, J ; Qu, W ; Li, WJ ; Yang, S |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2008 |
| 卷号 | 23期号:7页码:75025-75025 |
| 关键词 | SHALLOW TRENCH ISOLATION NARROW MOSFETS OXIDE |
| ISSN号 | 0268-1242 |
| 通讯作者 | Wang, L, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94924]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, L,Wang, J,Li, R,et al. Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(7):75025-75025. |
| APA | Wang, L.,Wang, J.,Li, R.,Lee, P.,Hu, J.,...&Yang, S.(2008).Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,23(7),75025-75025. |
| MLA | Wang, L,et al."Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23.7(2008):75025-75025. |
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