中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer

文献类型:期刊论文

作者Wu,AM ; Chen,J ; Zhang,EX ; Wang,X ; Zhang,ZX
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2008
卷号23期号:1页码:15015-15015
关键词RAY PHOTOELECTRON-SPECTROSCOPY INTERFACE TRAPS IRRADIATION NANOCRYSTALS TRANSISTORS OXIDES LAYERS HOLE
ISSN号0268-1242
通讯作者Wu, AM, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94941]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wu,AM,Chen,J,Zhang,EX,et al. Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(1):15015-15015.
APA Wu,AM,Chen,J,Zhang,EX,Wang,X,&Zhang,ZX.(2008).Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,23(1),15015-15015.
MLA Wu,AM,et al."Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23.1(2008):15015-15015.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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