Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gu, Y ; Zhang, YG(张永刚） |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:2页码:726-729 |
| 关键词 | 2.1 MU-M TEMPERATURE-DEPENDENCE LASERS PHOTOLUMINESCENCE WAVELENGTH HETEROSTRUCTURE |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94942]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gu, Y,Zhang, YG. Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy[J]. CHINESE PHYSICS LETTERS,2008,25(2):726-729. |
| APA | Gu, Y,&Zhang, YG.(2008).Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy.CHINESE PHYSICS LETTERS,25(2),726-729. |
| MLA | Gu, Y,et al."Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy".CHINESE PHYSICS LETTERS 25.2(2008):726-729. |
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