Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device
文献类型：期刊论文
| 作者 | Zhong, M ; Song, ZT ; Liu, B ; Feng, SL ; Chen, B |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:2页码:762-764 |
| 关键词 | CELL-ELEMENT BEAM METHOD |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhong, M, Chinese Acad Sci, Shanghai Inst Micro Syst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94945]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhong, M,Song, ZT,Liu, B,et al. Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device[J]. CHINESE PHYSICS LETTERS,2008,25(2):762-764. |
| APA | Zhong, M,Song, ZT,Liu, B,Feng, SL,&Chen, B.(2008).Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device.CHINESE PHYSICS LETTERS,25(2),762-764. |
| MLA | Zhong, M,et al."Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device".CHINESE PHYSICS LETTERS 25.2(2008):762-764. |
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