A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion
文献类型：期刊论文
| 作者 | Dai, MZ ; Gao, C ; Yap, K ; Shan, Y ; Cao, Z ; Liao, K ; Wang, L ; Cheng, B ; Liu, S |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2008 |
| 卷号 | 55期号:5页码:1255-1258 |
| 关键词 | MOSFETS |
| ISSN号 | 0018-9383 |
| 通讯作者 | Dai, MZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94957]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, MZ,Gao, C,Yap, K,et al. A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2008,55(5):1255-1258. |
| APA | Dai, MZ.,Gao, C.,Yap, K.,Shan, Y.,Cao, Z.,...&Liu, S.(2008).A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion.IEEE TRANSACTIONS ON ELECTRON DEVICES,55(5),1255-1258. |
| MLA | Dai, MZ,et al."A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion".IEEE TRANSACTIONS ON ELECTRON DEVICES 55.5(2008):1255-1258. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。