Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations
文献类型：期刊论文
| 作者 | Zhang, YG(张永刚） ; Gu, Y ; Tian, ZB ; Li, AZ ; Zhu, XR ; Zheng, YL |
| 刊名 | INFRARED PHYSICS & TECHNOLOGY
 |
| 出版日期 | 2008 |
| 卷号 | 51期号:4页码:316-321 |
| 关键词 | VAPOR-PHASE EPITAXY GAS-SOURCE MBE DARK CURRENT PHOTODETECTORS DETECTORS MOCVD |
| ISSN号 | 1350-4495 |
| 通讯作者 | Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Instruments & Instrumentation; Optics; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94962]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YG,Gu, Y,Tian, ZB,et al. Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations[J]. INFRARED PHYSICS & TECHNOLOGY,2008,51(4):316-321. |
| APA | Zhang, YG,Gu, Y,Tian, ZB,Li, AZ,Zhu, XR,&Zheng, YL.(2008).Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations.INFRARED PHYSICS & TECHNOLOGY,51(4),316-321. |
| MLA | Zhang, YG,et al."Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations".INFRARED PHYSICS & TECHNOLOGY 51.4(2008):316-321. |
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