Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells
文献类型：期刊论文
| 作者 | Cao, M ; Lao, YF ; Wu, HZ ; Liu, C ; Xie, ZS ; Cao, CF ; Wu, HZ |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
 |
| 出版日期 | 2008 |
| 卷号 | 26期号:2页码:219-223 |
| 关键词 | DAMAGE DIODES RECOMBINATION LIGHT |
| ISSN号 | 0734-2101 |
| 通讯作者 | Cao, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Coatings & Films; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94964]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, M,Lao, YF,Wu, HZ,et al. Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2008,26(2):219-223. |
| APA | Cao, M.,Lao, YF.,Wu, HZ.,Liu, C.,Xie, ZS.,...&Wu, HZ.(2008).Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,26(2),219-223. |
| MLA | Cao, M,et al."Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26.2(2008):219-223. |
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