Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs
文献类型：期刊论文
| 作者 | Wang,QX ; Sun,LX ; Yap,A ; Zhang,YJ ; Li,H ; Liu,SH ; Zou,SC |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2008 |
| 卷号 | 85期号:3页码:493-499 |
| 关键词 | HOT-CARRIER DEGRADATION THICK SIO2 OXIDES IMPACT IONIZATION MOSFETS CHANNEL MEMORY CELLS MODEL NBTI 1ST |
| ISSN号 | 0167-9317 |
| 通讯作者 | Wang, QX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering ; Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94970]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang,QX,Sun,LX,Yap,A,et al. Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs[J]. MICROELECTRONIC ENGINEERING,2008,85(3):493-499. |
| APA | Wang,QX.,Sun,LX.,Yap,A.,Zhang,YJ.,Li,H.,...&Zou,SC.(2008).Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs.MICROELECTRONIC ENGINEERING,85(3),493-499. |
| MLA | Wang,QX,et al."Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs".MICROELECTRONIC ENGINEERING 85.3(2008):493-499. |
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