Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties
文献类型:期刊论文
作者 | Lin, CT ; Yu, GH ; Wang, XZ ; Cao, MX ; Lu, HF ; Gong, H ; Qi, M ; Li, AZ |
刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
![]() |
出版日期 | 2008 |
卷号 | 112期号:48页码:18821-18824 |
关键词 | EPITAXIAL LATERAL OVERGROWTH NANOROD ARRAYS |
ISSN号 | 1932-7447 |
通讯作者 | Yu, GH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
学科主题 | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/94979] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Lin, CT,Yu, GH,Wang, XZ,et al. Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2008,112(48):18821-18824. |
APA | Lin, CT.,Yu, GH.,Wang, XZ.,Cao, MX.,Lu, HF.,...&Li, AZ.(2008).Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties.JOURNAL OF PHYSICAL CHEMISTRY C,112(48),18821-18824. |
MLA | Lin, CT,et al."Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties".JOURNAL OF PHYSICAL CHEMISTRY C 112.48(2008):18821-18824. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。