中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties

文献类型:期刊论文

作者Lin, CT ; Yu, GH ; Wang, XZ ; Cao, MX ; Lu, HF ; Gong, H ; Qi, M ; Li, AZ
刊名JOURNAL OF PHYSICAL CHEMISTRY C
出版日期2008
卷号112期号:48页码:18821-18824
关键词EPITAXIAL LATERAL OVERGROWTH NANOROD ARRAYS
ISSN号1932-7447
通讯作者Yu, GH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94979]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Lin, CT,Yu, GH,Wang, XZ,et al. Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2008,112(48):18821-18824.
APA Lin, CT.,Yu, GH.,Wang, XZ.,Cao, MX.,Lu, HF.,...&Li, AZ.(2008).Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties.JOURNAL OF PHYSICAL CHEMISTRY C,112(48),18821-18824.
MLA Lin, CT,et al."Catalyst-Free Growth of Well Vertically Aligned GaN Needlelike Nanowire Array with Low-Field Electron Emission Properties".JOURNAL OF PHYSICAL CHEMISTRY C 112.48(2008):18821-18824.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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