中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer

文献类型:期刊论文

作者Wei, X ; Wu, AM ; Chen, M ; Chen, J ; Zhang, M ; Wang, X ; Lin, CL
刊名JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版日期2008
卷号26期号:6页码:L45-L47
关键词LOW-DOSE SEPARATION BURIED-OXIDE THERMAL-OXIDATION WAFERS
ISSN号1071-1023
通讯作者Zhang, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Infromat, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94984]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wei, X,Wu, AM,Chen, M,et al. Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2008,26(6):L45-L47.
APA Wei, X.,Wu, AM.,Chen, M.,Chen, J.,Zhang, M.,...&Lin, CL.(2008).Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,26(6),L45-L47.
MLA Wei, X,et al."Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26.6(2008):L45-L47.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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