Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer
文献类型:期刊论文
作者 | Wei, X ; Wu, AM ; Chen, M ; Chen, J ; Zhang, M ; Wang, X ; Lin, CL |
刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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出版日期 | 2008 |
卷号 | 26期号:6页码:L45-L47 |
关键词 | LOW-DOSE SEPARATION BURIED-OXIDE THERMAL-OXIDATION WAFERS |
ISSN号 | 1071-1023 |
通讯作者 | Zhang, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Infromat, Shanghai 200050, Peoples R China |
学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/94984] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wei, X,Wu, AM,Chen, M,et al. Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2008,26(6):L45-L47. |
APA | Wei, X.,Wu, AM.,Chen, M.,Chen, J.,Zhang, M.,...&Lin, CL.(2008).Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,26(6),L45-L47. |
MLA | Wei, X,et al."Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26.6(2008):L45-L47. |
入库方式: OAI收割
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