High-Quality Thick GaN Overgrown on an Array of SiO2 Nanomasks by HVPE
文献类型：期刊论文
| 作者 | Wang, XZ ; Yu, GH ; Lin, CT ; Cao, MX ; Lu, HF ; Gong, H ; Li, XL ; Qi, M ; Li, AZ |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2008 |
| 卷号 | 155期号:12页码:H1000-H1002 |
| 关键词 | LIGHT-EMITTING-DIODES EPITAXIAL GAN FABRICATION FILMS |
| ISSN号 | 0013-4651 |
| 通讯作者 | Wang, XZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94986]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XZ,Yu, GH,Lin, CT,et al. High-Quality Thick GaN Overgrown on an Array of SiO2 Nanomasks by HVPE[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2008,155(12):H1000-H1002. |
| APA | Wang, XZ.,Yu, GH.,Lin, CT.,Cao, MX.,Lu, HF.,...&Li, AZ.(2008).High-Quality Thick GaN Overgrown on an Array of SiO2 Nanomasks by HVPE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,155(12),H1000-H1002. |
| MLA | Wang, XZ,et al."High-Quality Thick GaN Overgrown on an Array of SiO2 Nanomasks by HVPE".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155.12(2008):H1000-H1002. |
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