Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash((R)) memory cell
文献类型：期刊论文
| 作者 | Cao, ZG ; Zhang, B ; Zhang, X ; Lee, E ; Kong, WR |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2008 |
| 卷号 | 48期号:11-12页码:1809-1814 |
| 关键词 | GATE FLASH MEMORIES DATA RETENTION EMBEDDED MEMORY INJECTION HIMOS |
| ISSN号 | 0026-2714 |
| 通讯作者 | Cao, ZG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94989]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, ZG,Zhang, B,Zhang, X,et al. Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash((R)) memory cell[J]. MICROELECTRONICS RELIABILITY,2008,48(11-12):1809-1814. |
| APA | Cao, ZG,Zhang, B,Zhang, X,Lee, E,&Kong, WR.(2008).Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash((R)) memory cell.MICROELECTRONICS RELIABILITY,48(11-12),1809-1814. |
| MLA | Cao, ZG,et al."Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash((R)) memory cell".MICROELECTRONICS RELIABILITY 48.11-12(2008):1809-1814. |
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