Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics
文献类型：期刊论文
| 作者 | Song, ZR ; Cheng, XH ; Zhang, EX ; Xing, YM ; Yu, YH ; Zhang, ZX ; Wang, X ; Shen, DS |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2008 |
| 卷号 | 517期号:1页码:465-467 |
| 关键词 | BORON PENETRATION TRANSISTORS CHARGE SI |
| ISSN号 | 0040-6090 |
| 通讯作者 | Cheng, XH, Univ Wenzhou, Xueyuan Rd, Wenzhou 325000, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95002]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, ZR,Cheng, XH,Zhang, EX,et al. Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics[J]. THIN SOLID FILMS,2008,517(1):465-467. |
| APA | Song, ZR.,Cheng, XH.,Zhang, EX.,Xing, YM.,Yu, YH.,...&Shen, DS.(2008).Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics.THIN SOLID FILMS,517(1),465-467. |
| MLA | Song, ZR,et al."Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics".THIN SOLID FILMS 517.1(2008):465-467. |
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