In situ monitoring and real-time control of gate hardmask etching in high-volume manufacturing of ICs
文献类型：期刊论文
| 作者 | Chen, L ; Jiang, WN ; Pao, T ; Lin, B ; Xu, LD ; Ji, GM ; Cai, H |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2008 |
| 卷号 | 155期号:11页码:D699-D702 |
| 关键词 | ELECTRONICS CONFERENCE REACTOR SILICON DIOXIDE FLUOROCARBON PLASMAS CHAMBER WALL CHF3 CF4 |
| ISSN号 | 0013-4651 |
| 通讯作者 | Chen, L, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95005]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, L,Jiang, WN,Pao, T,et al. In situ monitoring and real-time control of gate hardmask etching in high-volume manufacturing of ICs[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2008,155(11):D699-D702. |
| APA | Chen, L.,Jiang, WN.,Pao, T.,Lin, B.,Xu, LD.,...&Cai, H.(2008).In situ monitoring and real-time control of gate hardmask etching in high-volume manufacturing of ICs.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,155(11),D699-D702. |
| MLA | Chen, L,et al."In situ monitoring and real-time control of gate hardmask etching in high-volume manufacturing of ICs".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155.11(2008):D699-D702. |
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