The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer
文献类型：期刊论文
| 作者 | Cheng, XH ; He, DW ; Zhaorui, SR ; Yu, YH ; Shen, DS |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2008 |
| 卷号 | 85期号:9页码:1888-1891 |
| 关键词 | INTERFACIAL CHARACTERISTICS GATE DIELECTRICS OXIDATION |
| ISSN号 | 0167-9317 |
| 通讯作者 | Cheng, XH, Wenzhou Univ, Wenzhou 325027, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95029]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, XH,He, DW,Zhaorui, SR,et al. The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer[J]. MICROELECTRONIC ENGINEERING,2008,85(9):1888-1891. |
| APA | Cheng, XH,He, DW,Zhaorui, SR,Yu, YH,&Shen, DS.(2008).The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer.MICROELECTRONIC ENGINEERING,85(9),1888-1891. |
| MLA | Cheng, XH,et al."The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer".MICROELECTRONIC ENGINEERING 85.9(2008):1888-1891. |
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