中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

文献类型:期刊论文

作者Yu, JL ; Liu, B ; Zhang, T ; Song, ZT ; Feng, SL ; Chen, BM
刊名APPLIED SURFACE SCIENCE
出版日期2007
卷号253期号:14页码:6125-6129
关键词TRANSMISSION ELECTRON-MICROSCOPY CHALCOGENIDE GLASSES ANTIMONY TELLURIDE SINGLE-CRYSTALS MEMORY GE2SB2TE5 CRYSTALLIZATION TRANSITION
ISSN号0169-4332
通讯作者Yu, JL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95039]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Yu, JL,Liu, B,Zhang, T,et al. Effects of Ge doping on the properties of Sb2Te3 phase-change thin films[J]. APPLIED SURFACE SCIENCE,2007,253(14):6125-6129.
APA Yu, JL,Liu, B,Zhang, T,Song, ZT,Feng, SL,&Chen, BM.(2007).Effects of Ge doping on the properties of Sb2Te3 phase-change thin films.APPLIED SURFACE SCIENCE,253(14),6125-6129.
MLA Yu, JL,et al."Effects of Ge doping on the properties of Sb2Te3 phase-change thin films".APPLIED SURFACE SCIENCE 253.14(2007):6125-6129.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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