Threshold voltage shift due to mechanical stress-enhanced plasma process-induced damage in 0.13-mu m pMOSFET
文献类型：期刊论文
| 作者 | Li, R ; Kong, WR ; Tao, K ; Yu, LJ ; Huang, K ; Ning, J ; Geng, CQ ; Wang, CD |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:5页码:360-362 |
| 关键词 | GATE OXIDES DEGRADATION |
| ISSN号 | 0741-3106 |
| 通讯作者 | Li, R, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95047]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, R,Kong, WR,Tao, K,et al. Threshold voltage shift due to mechanical stress-enhanced plasma process-induced damage in 0.13-mu m pMOSFET[J]. IEEE ELECTRON DEVICE LETTERS,2007,28(5):360-362. |
| APA | Li, R.,Kong, WR.,Tao, K.,Yu, LJ.,Huang, K.,...&Wang, CD.(2007).Threshold voltage shift due to mechanical stress-enhanced plasma process-induced damage in 0.13-mu m pMOSFET.IEEE ELECTRON DEVICE LETTERS,28(5),360-362. |
| MLA | Li, R,et al."Threshold voltage shift due to mechanical stress-enhanced plasma process-induced damage in 0.13-mu m pMOSFET".IEEE ELECTRON DEVICE LETTERS 28.5(2007):360-362. |
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