Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure
文献类型：期刊论文
| 作者 | Tang, MH ; Zhou, YC ; Zheng, XJ ; Yan, Z ; Cheng, CP ; Ye, Z ; Hu, ZS |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2007 |
| 卷号 | 51期号:3页码:371-375 |
| 关键词 | THIN-FILMS MEMORY WINDOW BUFFER LAYERS POLARIZATION DEPOSITION SI RETENTION |
| ISSN号 | 0038-1101 |
| 通讯作者 | Zhou, YC, Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95049]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tang, MH,Zhou, YC,Zheng, XJ,et al. Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure[J]. SOLID-STATE ELECTRONICS,2007,51(3):371-375. |
| APA | Tang, MH.,Zhou, YC.,Zheng, XJ.,Yan, Z.,Cheng, CP.,...&Hu, ZS.(2007).Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure.SOLID-STATE ELECTRONICS,51(3),371-375. |
| MLA | Tang, MH,et al."Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure".SOLID-STATE ELECTRONICS 51.3(2007):371-375. |
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