Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory
文献类型：期刊论文
| 作者 | Zhang, T ; Song, ZT ; Liu, B ; Feng, SL ; Chen, BM |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2007 |
| 卷号 | 51期号:6页码:950-954 |
| 关键词 | THIN-FILM GE2SB2TE5 |
| ISSN号 | 0038-1101 |
| 通讯作者 | Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95062]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, T,Song, ZT,Liu, B,et al. Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory[J]. SOLID-STATE ELECTRONICS,2007,51(6):950-954. |
| APA | Zhang, T,Song, ZT,Liu, B,Feng, SL,&Chen, BM.(2007).Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory.SOLID-STATE ELECTRONICS,51(6),950-954. |
| MLA | Zhang, T,et al."Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory".SOLID-STATE ELECTRONICS 51.6(2007):950-954. |
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