Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer
文献类型:期刊论文
作者 | Wang, LY ; Zhang, KL ; Song, ZT ; Feng, SL |
刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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出版日期 | 2007 |
卷号 | 154期号:3页码:H166-H169 |
关键词 | MIXED ABRASIVE SLURRIES PLASMAS FILMS PH |
ISSN号 | 0013-4651 |
通讯作者 | Wang, LY, Chinese Acad Sci, Grad Sch, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol,Lab Na, Shanghai 200050, Peoples R China |
学科主题 | Electrochemistry; Materials Science, Coatings & Films |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95069] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, LY,Zhang, KL,Song, ZT,et al. Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2007,154(3):H166-H169. |
APA | Wang, LY,Zhang, KL,Song, ZT,&Feng, SL.(2007).Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,154(3),H166-H169. |
MLA | Wang, LY,et al."Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154.3(2007):H166-H169. |
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